g ? sic ? technology megabright? leds c xxx -mb290-s0100 f e a t u r e s a p p l i c a t i o n s ? megabright? perform a nce ? 11.0m w (460nm ) deep blue ? 10.0m w (470nm ) blue ? 8.0m w (505nm ) traffic green ? 7.0m w (527nm ) green ? single w i re bond structure ? class ii esd rating ? outdoor led video displays ? autom o tive dashboard lighting ? w h ite leds ? backlighting ? traffic signals description cree' s mb? series of megabright? leds com b ine highly efficient ingan m a terials with cree' s proprietary sic? substrate to deliver superior pri ce/perform a nce for high intensity blue and green leds. these led chips have a geom etrically enhanced vertical chip structure to m a xim i ze light extraction efficiency, and require only a single wire bond connecti on. sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. cree' s mb series chips are individually tested for conform ity to optical and electrical specifications and the ability to withstand 1000v esd. these leds are useful in a broad range of applications such as outdoor full m o tion led video signs, autom o tive lighting and white leds, yet can also be used in high volum e applications such as lcd backlighting. cree' s mb series chips are com p atible with m o st radial and smt led assem b ly processes. c xxx -mb290-s0100 chip diagram top s ide v i e w g ? sic? le d chip 300 x 300 m m e sa ( j unc tio n) 240 x 240 m gold b o n d p a d 114 m di am et er a n ode (+) h = 250 m b ack s i de m e tallizatio n c a t h ode ( - ) in g a n sic substrate b o ttom vi ew die cros s s ection cpr3ap rev. d ? cree, inc. 2001-03 all rights reserved.
cpr3ap rev. d ? cree, inc. 2001-03 all rights reserved. g ? sic ? technology megabright? leds c xxx-mb290-s0100 maximum ratings at t a = 25c notes 1&3 c xxx-mb290-s0100 dc forward current 30ma peak forward current (1/10 duty cycle @ 1khz) 100ma led junction temperature 125c reverse voltage 5 v operating temperature range -20c to +80c storage temperature range -30c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classification (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20ma note 3 part number forward voltage (v f, v) reverse current [i(vr=5v), a] peak wavelength ( o p, nm) full width half max ( o d, nm) optical rise time ( w , ns) typ max max typ typ typ c460mb290-s0100 3.5 3.8 10 458 26 30 c470 mb290-s0100 3.5 3.8 10 468 26 30 c505 mb290-s0100 3.8 4.0 10 502 30 30 c527 mb290-s0100 3.8 4.0 10 518 35 30 mechanical specifications note 4 c xxx-mb290-s0100 description dimension tolerance p-n junction area (m) 240 x 240 25 top area (m) 300 x 300 25 bottom area (m) 200 x 200 25 chip thickness (m) 250 25 au bond pad diameter (m) 114 20 au bond pad thickness (m) 1.2 0.5 back contact metal width (m) 15 -5, +10 notes: 1) maximum ratings are package dependent. the above ratings we re determined using a t-1 3/4 package with hysol os4000 epoxy f or characterization. seller makes no representations regarding ratings for packages other than the t-1 3/4 package used by seller. the forward currents (d c and peak) are not limited by the g ?sic die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limi t of the t-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. assembly processing temperature must not ex ceed 350c (< 15 minutes). 2) product resistance to electrostatic discharge (esd) is measur ed by simulating esd using a rapid avalanche energy test (raet ). the raet procedures are designed to approximate the maximum esd ra tings shown. seller gives no other assuran ces regarding the ability of products to wi thstand esd. 3) all products conform to the listed minimum and maximum speci fications for electrical and optical characteristics, when asse mbled and operated at 20 ma within the maximum ratings shown above. efficiency decreases at higher currents. typical values given are the average values expected by seller in large quantities and are provided for information only. seller gives no assurances pr oducts shipped will exhibit such typical ratings. all measure ments were made using lamps in t-1 3/4 packages with hysol os4000 epoxy. optical characteristics were measured in a photoresearch spectrascan integrating sphere. illuminance e. 4) all products conform to the listed mechanical specifications within the tolerances shown. 5) caution: to obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 p m.
g ? sic ? technology megabright? leds c xxx -mb290-s0100 standard bins for mb290: all led chips are sorted onto die sheet s according to the bins shown below. 460m b 2 90- 0105 460m b 290- 01 06 460m b 2 90- 0103 460m b 290- 01 04 c 460m b 290- s 0100 460m b 2 90- 0101 460m b 290- 01 02 470m b 2 90- 0107 470m b 290- 01 08 470 m b 290- 0109 c 470m b 290- s 0100 470m b 2 90- 0104 470m b 290- 01 05 470 m b 290- 0106 470m b 2 90- 0101 4 70m b 290- 0102 505m b 2 90- 0105 505m b 290- 01 06 505m b 2 90- 0103 505m b 290- 01 04 c 505m b 290- s 0100 505m b 2 90- 0101 505m b 290- 01 02 527m b 2 90- 0107 527m b 290- 01 08 527 m b 290- 0109 c 527m b 290- s 0100 527m b 2 90- 0104 527m b 290- 01 05 527 m b 290- 0106 527m b 2 90- 0101 527m b 290- 01 02 527 m b 290- 0103 535n m 470 n m 472n m 510n m 475n m 520n m 525 n m 530n m 500n m 505 n m 5. 0m w 7. 0m w 6. 0m w 8. 0m w 465n m 10. 0 m w 7. 0m w 10. 0 m w s o rt ed d i e k i t s m a y co n t ai n an y o r al l bi ns s how n t o t h e l e f t . 6. 0m w 12. 0 m w 8. 0m w 465n m 8. 0m w 7. 5m w 455n m 20. 0 m w 16. 0 m w 13. 0 m w 460 n m 11. 0 m w cpr3ap rev. d ? cree, inc. 2001-03 all rights reserved.
cpr3ap rev. d ? cree, inc. 2001-03 all rights reserved. g ? sic ? technology megabright? leds c xxx -mb290-s0100 characteristic curves w a v e l e ng t h shi f t v s for w a r d c u r r e nt - a l l pr o d u c t s -4 .0 -2 .0 0. 0 2. 0 4. 0 6. 0 8. 0 10 . 0 12 . 0 14 . 0 16 . 0 0 5 10 15 20 2 5 30 if ( m a ) s h i ft (nm) 5 27n m 5 05n m 4 70n m re la t i ve in t e n s it y vs f o r w a r d c u rr e n t - a ll p r o d u c t s 0. 0 20 . 0 40 . 0 60 . 0 80 . 0 10 0. 0 12 0. 0 14 0. 0 0 5 10 15 2 0 25 3 0 if ( m a ) % r e lativ e in ten s ity v s w a v e len g th - all p r o d u c ts 0% 20 % 40 % 60 % 80 % 10 0% w a v e le n g t h (n m ) re la tiv e inte ns ity (%) 500 fo r w a r d cu r r e nt v s for w a r d v o l t ag e - a l l p r o duc ts 0 5 10 15 20 25 30 0.0 0 . 5 1.0 1 . 5 2.0 2 . 5 3.0 3 . 5 4.0 4 . 5 5.0 vf ( v ) if (ma )
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